Low-frequency noise analysis on asymmetric damage and self-recovery behaviors of ZnSnO thin-film transistors under hot copyright stress
Abstract The need for understanding the low-frequency noise (LFN) of metal oxide semiconductor thin-film transistors (TFTs) is increasing owing to the substantial effects of LFN in various circuit applications.A focal point of inquiry pertains to 5 Piece Full Storage Bedroom the examination of LFN amidst bias stress conditions, known to compromise